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  • 原装正品 全新 AP4224LGM SOP-8 贴片 质量保证

    产品类别: 品牌: 批号: 封装: 数量:
    产品说明: Electrical acteristics@Tj =25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=7A - - 24 mΩ VGS=2.5V, ID=4A - - 38 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance VDS=10V, ID=7A - 23 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate ge ID=7A - 10 16 nC Qgs Gate-Source ge VDS=10V - 1.8 - nC Qgd Gate-Drain ("Miller") ge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=10V - 9 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 23 - ns tf Fall Time VGS=5V - 5 - ns Ciss Input Capacitance VGS=0V - 855 1370 pF Coss Output Capacitance VDS=10V - 230 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 1.25 2.5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=7A, VGS=0V, - 23 - ns Qrr Reverse Recovery ge dI/dt=100A/µs - 10 - nC
  • 原装正品 全新 AP4224M SOP8 贴片 质量保证

    产品类别: 品牌: 批号: 封装: 数量:
    产品说明: Electrical acteristics@Tj =25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=7A - - 24 mΩ VGS=2.5V, ID=4A - - 38 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 - 1.2 V gfs Forward Transconductance VDS=10V, ID=7A - 23 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate ge ID=7A - 10 16 nC Qgs Gate-Source ge VDS=10V - 1.8 - nC Qgd Gate-Drain ("Miller") ge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=10V - 9 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 23 - ns tf Fall Time VGS=5V - 5 - ns Ciss Input Capacitance VGS=0V - 855 1370 pF Coss Output Capacitance VDS=10V - 230 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 1.25 2.5 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=7A, VGS=0V, - 23 - ns Qrr Reverse Recovery ge dI/dt=100A/µs - 10 - nC
  • 全新 现货 AP4226AGM IC SOP8 直插 质量保证

    产品类别: 品牌: 批号: 封装: 数量:
    产品说明: Electrical acteristics@Tj =25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 18 mΩ VGS=4.5V, ID=6A - - 24 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 23 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj =70o C) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate ge ID=8A - 10 16 nC Qgs Gate-Source ge VDS=15V - 2.3 - nC Qgd Gate-Drain ("Miller") ge VGS=4.5V - 5 - nC td(on) Turn-on Delay Time VDS=15V - 8.5 - ns tr Rise Time ID=1A - 5.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 860 1420 pF Coss Output Capacitance VDS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V, - 23 - ns Qrr Reverse Recovery ge dI/dt=100A/µs - 15 - nC
  • 全新 现货AP4226BGM IC SOP8 贴片 质量保证

    产品类别: 品牌: 批号: 封装: 数量:
    产品说明: Electrical acteristics@Tj =25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 18 mΩ VGS=4.5V, ID=6A - - 24 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 23 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj =70o C) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate ge ID=8A - 10 16 nC Qgs Gate-Source ge VDS=15V - 2.3 - nC Qgd Gate-Drain ("Miller") ge VGS=4.5V - 5 - nC td(on) Turn-on Delay Time VDS=15V - 8.5 - ns tr Rise Time ID=1A - 5.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 860 1420 pF Coss Output Capacitance VDS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V, - 23 - ns Qrr Reverse Recovery ge dI/dt=100A/µs - 15 - nC
  • 全新 现货 AP4226GM IC SOP8 贴片 质量保证

    产品类别: 品牌: 批号: 封装: 数量:
    产品说明: Electrical acteristics@Tj =25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - - 18 mΩ VGS=4.5V, ID=6A - - 24 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 23 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj =70o C) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate ge ID=8A - 10 16 nC Qgs Gate-Source ge VDS=15V - 2.3 - nC Qgd Gate-Drain ("Miller") ge VGS=4.5V - 5 - nC td(on) Turn-on Delay Time VDS=15V - 8.5 - ns tr Rise Time ID=1A - 5.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=10V - 7 - ns Ciss Input Capacitance VGS=0V - 860 1420 pF Coss Output Capacitance VDS=25V - 200 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.7A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V, - 23 - ns Qrr Reverse Recovery ge dI/dt=100A/µs - 15 - nC
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